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| NE64700 NPN SILICON MICROWAVE TRANSISTOR DESCRIPTION: The ASI NE64700 is a bipolar transistor Designed for low noise applications at VHF, UFH and microwave frequencies up to 12 GHz. CHIP PACKAGE STYLE: CHIP FEATURES: * PG = 18.1 dB Typical @ 1.0 GHz * NF = 1.6 dB Typical @ 1.0 GHz EMITTER MAXIMUM RATINGS IC VCEO VCBO VEBO TJ TSTG 20 mA 7.0 V 9.0 V 1.5 V -65 C to +200 C -65 C to +150 C 55 B 0.0007 Inch Gold Wire 14 2 BASE Chip Dimension: (250 x 250) x 125 m Bond Pad: Die Attach: 50 x 50 m Gold Eutectic CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB NF PG P1dB ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 10 mA VCE = 8.0 V S21 2 TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 0.2 1.0 UNITS A A --pF dB dB dBm GHz IC = 10 mA f = 1.0 MHz IC = 2.0 mA IC = 10 mA f = 1.0 MHz f = 1.0 GHz 50 100 0.11 1.6 15 12 12 7.5 18.1 12.8 12.6 250 IC = 10 mA IC = 20 mA IC = 10 mA IC = 20 mA f = 1.0 GHz f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. EMITTER 0.0007 Inch Gold Wire dB REV. A 1/1 |
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